View HV83007_4771864.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HV830 High Voltage EL Lamp Driver IC
Features
Processed with HVCMOS(R) technology 2.0V to 9.5V operating supply voltage DC to AC conversion 200V peak-to-peak typical output voltage Large output load capability typically 50nF Permits the use of high-resistance elastomeric lamp components Adjustable output lamp frequency to control lamp color,lamp life, and power consumption Adjustable converter frequency to eliminate harmonics and optimize power consumption Enable/disable function Low current draw under no load condition Very low standby current - 30nA typical
General Description
The Supertex HV830 is a high-voltage driver designed for driving EL lamps of up to 50nF. EL lamps greater than 50nF can be driven for applications not requiring high brightness. The input supply voltage range is from 2.0V to 9.5V. The device uses a single inductor and a minimum number of passive components. The nominal regulated output voltage that is applied to the EL lamp is 100V. The chip can be enabled by connecting the resistors on the RSW-Osc and REL-Osc pins to the VDD pin, and disabled when connected to GND. The HV830 has two internal oscillators, a switching MOSFET and a high-voltage EL lamp driver. The frequency of the switching converter MOSFET is set by an external resistor connected between the RSW-Osc and the VDD pins. The EL lamp driver frequency is set by an external resistor connected between the REL-Osc and the VDD pins. An external inductor is connected between the LX and VDD pins. A 0.01F to 0.1F capacitor is connected between the CS pin and the GND. The EL lamp is connected between the VA and VB pins. The switching MOSFET charges the external inductor and discharges it into the CS capacitor. The voltage at CS will start to increase. Once the voltage at CS reaches a nominal value of 100V, the switching MOSFET is turned OFF to conserve power. The output pins VA and VB are configured as an Hbridge and are switched in opposite states to achieve 200V peak-to-peak across the EL lamp.
Applications
Handheld personal computers Electronic personal organizers GPS units Pagers Cellular phones Portable instrumentation
Block Diagram
VDD RSW-Osc ENABLE GND + Disable C Q _ LX CS
Switch Osc
Q VA
VREF Output Osc
Q
REL-Osc Q
VB
HV830
Ordering Information
Device HV830 Package Option 8-Lead SOIC HV830LG HV830LG-G
Pin Configuration
VDD RSW-Osc CS LX
1 2 3 4
8 7 6 5
REL-Osc VA VB GND
-G indicates the package is RoHS compliant - "Green"
8-Lead SOIC
(top view)
Product Marking Absolute Maximum Ratings
Parameter Supply voltage, VDD Output voltage, VCS Power dissipation Storage temperature Operating temperature Value -0.5 to +10V -0.5 to +120V 400mW -65OC to +150OC -25OC to +85OC
YWW
HV830
LLLL
Y = Last Digit of Year Sealed WW = Week Sealed L = Lot Number = "Green" Packaging
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Recommended Operating Conditions
Symbol Parameter VDD fEL TA Supply voltage VA-B output drive frequency Operating temperature Min 2.0 -25 Typ Max 9.5 1.5 +85 Unit V KHz
O
Conditions -------
C
DC Electrical Characteristics (V
Symbol Parameter RDS(ON) VCS VA - VB IDDQ IDD IIN VCS fEL fSW D
IN
= 3.0V, RSW = 1.0M, REL = 3.3M, TA = 25C unless otherwise specified)
Min 90 180 220 55 -
Typ 2.0 100 200 30 100 35 95 250 65 88
Max 4.0 110 220 150 40 280 75 -
Unit V V nA A mA V Hz KHz %
Conditions I = 100mA VDD = 2.0V to 9.5V VDD = 2.0V to 9.5V RSW-Osc = Low VDD = 3.0V. See Fig.1 VDD = 3.0V. See Fig.1 VDD = 3.0V. See Fig.1 VDD = 3.0V. See Fig.1 VDD = 3.0V. See Fig.1 ---
ON resistance of switching transistor Output voltage - regulation Output peak-to-peak voltage Quiescent VDD current - diabled VDD supply current Input current including inductor current Output voltage on VCS VA - VB output drive frequency Inductor switching frequency Switching transistor duty cycle
2
HV830
Fig.1: Test Circuit, VIN = 3.0V
ON = VDD OFF = 0V 3.3M
1 1.0M 220H1 VDD = VIN = 3.0V 0.1F2 0.01F 200V Notes: 1. Murata part # LQH4N221K04 (DC resistanve < 5.4). 2. Larger values may be required depending upon supply impedence. 2 BAS21LT1 3 4 1nF
VDD
REL-Osc VA VB GND
8 7 6 5 3.0 square inch lamp.
RSW-Osc CS LX
HV830
Enable/Disable Configuration
The HV830 can be easily enabled and disabled via a logic control signal on the RSW and REL resistors as shown in Fig.4 below. The control signal can be from a microprocessor. RSW and REL are typically very high values, therefore, only 10's of microamperes will be drawn from the logic signal when it is at a logic high (enable) state. When the microprocessor signal is high the device is enabled and when the signal is low, it is disabled.
Fig. 2: Enable/Disable Configuration
ON =VDD OFF = 0V 1 RSW LX + VIN = VDD 4.7F 15V BAS21LT1 CS 200V 3 4 CS LX VB GND 6 5 2 RSW-Osc VA 7 EL Lamp VDD REL-Osc 8 Remote Enable REL
1.0nF
HV830
Enable/Disable Table
RSW Resistor VDD 0V HV830 Enable Disable
3
HV830
Fig. 3 Split Supply Configuration
ON = VDD OFF = 0V VDD = Regulated Voltage RSW LX + VIN = Battery Voltage 3 - 0.1F* CS 200V BAS21LT1 4 LX GND 5 CS VB 6 2 RSW-Osc VA 7 EL Lamp Remote Enable REL
1
VDD
REL-Osc
8
HV830
1nF
* Larger values may be required depending upon supply impedence.
Split Supply Configuration Using a Single Cell (1.5V) Battery
The HV830 can also be used for handheld devices operating from a single cell 1.5V battery where a regulated voltage is available. This is shown in Fig. 3. The regulated voltage can be used to run the internal logic of the HV830. The amount of current necessary to run the internal logic is typically 100A at a VDD of 3.0V. Therefore, the regulated voltage could easily provide the current without being loaded down. The HV830 used in this configuration can also be enabled/disabled via logic control signal on the RSW and REL resistors as shown in Fig.2.
Split Supply Configuration for Battery Voltages of Higher than 9.5V
Fig. 3 can also be used with high battery voltages, such as 12V, as long as the input voltage, VDD, to the HV830 device is within its specifications of 2.0V to 9.5V.
4
HV830
External Component Description
External Component Diode CS Capacitor Description Fast reverse recovery diode, BAS21LT1 or equivalent. 0.01F to 0.1F, 200V capacitor to GND is used to store the energy transferred from the inductor. The EL lamp frequency is controlled via an external REL resistor connected between REL-Osc and VDD pins of the device. The lamp frequency increases as REL decreases. As the EL lamp frequency increases, the amount of current drawn from the battery will increase and the output voltage VCS will decrease. The color of the EL lamp is dependent upon its frequency. A 3.3M resistor would provide lamp frequency of 220 to 280Hz. Decreasing the REL-Osc by a factor of 2 will increase the lamp frequency by a factor of 2. The switching frequency of the converter is controlled via an external resistor, RSW between the RSW-Osc and VDD pins of the device. The switching frequency increases as RSW decreases. With a given inductor, as the switching frequency increases, the amount of current drawn from the battery will decrease and the output voltage, VCS, will also decrease.
REL-Osc
RSW-Osc
A 1nF capacitor is recommended between the RSW-Osc pin and GND when a 0.01F CS capacitor is used. This capacitor is used to shunt any switching noise that may couple into the RSW-Osc pin. The CSW capaciCSW Capacitor tor may also be needed when driving large EL lamp due to increase in switching noise. A CSW larger than 1.0nF is not recommended. The inductor LX is used to boost the low input voltage by inductive flyback. When the internal switch is on, the inductor is being charged. When the internal switch is off, the charge stored in the inductor will be transferred to the high voltage capacitor CS. The energy stored in the capacitor is connected to the internal H-bridge and therefore to the EL lamp. In general, smaller value inductors, which can handle more current, are more suitable to drive larger size lamps. As the inductor value decreases, the switching frequency of the inductor (controlled by RSW) should be increased to avoid saturation. 220H Murata inductors with 5.4 series DC resistance is typically recommended. For inductors with the same inductance value but with lower series DC resistance, lower RSW value is needed to prevent high current draw and inductor saturation. As the EL lamp size increases, more current will be drawn from the battery to maintain high voltage across the EL lamp. The input power, (VIN x IIN), will also increase. If the input power is greater than the power dissipation of the package (400mW), an external resistor in series with one side of the lamp is recommended to help reduce the package power dissipation.
LX Inductor
Lamp
5
HV830 8-Lead SOIC (Narrow Body) Package Outline (LG)
4.9x3.9mm body, 1.75mm height (max), 1.27mm pitch
D 8 E E1
Note 1 (Index Area D/2 x E1/2) L 1
L2
Gauge Plane
1
L1
Seating Plane
Top View A
Note 1
View B View B
h h
A
A2
Seating Plane
A1
e
b
Side View
A View A-A
Note 1: This chamfer feature is optional. If it is not present, then a Pin 1 identifier must be located in the index area indicated.The Pin 1 identifier may be either a mold, or an embedded metal or marked feature.
Symbol MIN Dimension (mm) NOM MAX
A 1.35 1.75
A1 0.10 0.25
A2 1.25 1.50
b 0.31 0.51
D 4.80 4.90 5.00
E 5.80 6.00 6.20
E1 3.80 3.90 4.00
e 1.27 BSC
h 0.25 0.50
L 0.40 1.27
L1 1.04 REF
L2 0.25 BSC
0
O
1 5O 15O
8O
JEDEC Registration MS-012, Variation AA, Issue E, Sept. 2005. Drawings not to scale.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)
Doc. # DSFP-HV830 C081507
6

▲Up To Search▲

Price & Availability of HV83007

	To Download HV83007 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .